dc.contributor |
Háskólinn í Reykjavík |
dc.contributor |
Reykjavik University |
dc.contributor.author |
Árnason, Hákon Örn |
dc.contributor.author |
Torfason, Kristinn |
dc.contributor.author |
Manolescu, Andrei |
dc.contributor.author |
Valfells, Ágúst |
dc.date.accessioned |
2024-02-14T11:30:05Z |
dc.date.available |
2024-02-14T11:30:05Z |
dc.date.issued |
2024 |
dc.identifier.issn |
0018-9383 |
dc.identifier.issn |
1557-9646 |
dc.identifier.uri |
https://hdl.handle.net/20.500.11815/4716 |
dc.description.abstract |
Molecular dynamics simulations, with full Coulomb interaction, are used to model short-pulse photoemission from a finite area in a microdiode. We demonstrate three emission regimes, source-limited emission, space-charge-limited emission for short pulses, and space-charge-limited emission for the steady state. We show that beam brightness is at a maximum during the transition from the source-limited emission regime to the space-charge-limited emission regime for short pulses. From our simulations, it is apparent that the emitter spot size is an important factor when estimating the critical charge density for short-pulse electron emission and that simple capacitive models may considerably underestimate the total charge emitted. |
dc.description.sponsorship |
Icelandic Research Fund grant number 174512-051
Landsvirkjun energy research fund
Reykjavik University doctoral fund |
dc.format.extent |
1-8 |
dc.language.iso |
en |
dc.publisher |
Institute of Electrical and Electronics Engineers (IEEE) |
dc.rights |
info:eu-repo/semantics/openAccess |
dc.subject |
Electrical and Electronic Engineering |
dc.subject |
Electronic, Optical and Magnetic Materials |
dc.subject |
Rafmagnsverkfræði |
dc.subject |
Rafeindaverkfræði |
dc.subject |
Rafsegulfræði |
dc.subject |
Eðlisfræði |
dc.title |
Simulation of short pulse photoemission in a microdiode with implications for optimal beam brightness |
dc.type |
info:eu-repo/semantics/article |
dc.description.version |
Accepted Manuscript |
dc.identifier.journal |
IEEE Transactions on Electron Devices |
dc.identifier.doi |
10.1109/TED.2024.3351096 |
dc.relation.url |
http://xplorestaging.ieee.org/ielx7/16/4358746/10410174.pdf?arnumber=10410174 |
dc.contributor.department |
Department of Engineering |
dc.contributor.department |
Verkfræðideild |
dc.contributor.school |
School of Technology |
dc.contributor.school |
Tæknisvið |